to-92 plastic-encapsulate transistors bc337/BC338 transistor (npn) features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage bc337 BC338 50 30 v v ceo collector-emitter voltage bc337 BC338 45 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 800 ma p d total device dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bc337 BC338 v cbo i c = 100ua, i e =0 50 30 v v collector-emitter breakdown voltage bc337 BC338 v ceo i c = 10ma , i b =0 45 25 v v emitter-base breakdown voltage v ebo i e = 10ua, i c =0 5 v collector cut-off current bc337 BC338 i cbo v cb = 45v, i e =0 v cb = 25v, i e =0 0.1 0.1 ua collector cut-off current bc337 BC338 i ceo v ce = 40v, i b =0 v ce = 20v, i b =0 0.2 0.2 ua emitter cut-off current i ebo v eb = 4 v, i c =0 0.1 ua bc337/BC338 bc337-16/BC338-16 bc337-25/BC338-25 bc337-40/BC338-40 h fe(1) v ce =1v, i c = 100ma 100 100 160 250 630 250 400 630 dc current gain h fe(2) v ce =1v, i c = 300ma 60 collector-emitter saturation voltage v ce(sat) i c =500ma, i b = 50ma 0.7 v base-emitter saturation voltage v be(sat) i c = 500ma, i b =50ma 1.2 v base-emitter voltage v be v ce =1v, i c = 300ma 1.2 v transition frequency f t v ce = 5v, i c = 10ma f = 100mhz 210 mhz collector output capacitance cob v cb =10v,i e =0 f=1mhz 15 pf to-92 1. collector 2.base 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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